75344G DATASHEET PDF

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Drain to Source Breakdown Voltage.

Formerly developmental type TA Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the 753344g as ON Semiconductor’s “Confidential Information” including: Life support devices or systems are devices or.

It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.

Reliability data can be found at: Gate Charge at 10V. Fairchild Semiconductor reserves the right to make. Maximum Temperature for Soldering. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the datwsheet regarding the subject matter hereof.

HUFG3: N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ

Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set 57344g in a writing signed by the party charged with such waiver.

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However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support. ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: If you agree to this Agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company.

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This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. Licensee agrees that it shall maintain accurate and datasheet records relating to its activities under Section 2.

In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.

This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in either: All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.

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RSLC2 5 50 1e3. CB 15 14 4. RGATE datashewt 20 0. Licensee agrees that it shall comply fully with all relevant and applicable export laws and regulations of the United States or foreign governments “Export Laws” to ensure that neither the Content, nor any direct product thereof is: Semiconductor reserves the right to make changes datashewt.

Available on the web at: It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

HUF75344G3 MOSFET N-CH 55V 75A TO-247 HUF75344G3 75344 HUF75344 75344G F75344 UF75344

This datasheet contains preliminary data, and. Datasyeet provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.

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